Fermi level pinning on Si[sub 0.83]Ge[sub 0.17] surface by inductively coupled plasma treatment
نویسندگان
چکیده
منابع مشابه
Surface recombination, surface states and Fermi level pinning
2014 Surface and interface recombination processes, which are becoming more and more important with the appearance of small-size optoelectronic devices, are still not well understood because reliable data are very scarce. We report here the first simultaneous in situ measurements of the density and position of surface states, of the position of the Fermi level at the surface, and of the surface...
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Dispersive liquid–liquid microextraction (DLLME) combined with inductively coupled plasma-atomic emission spectrometry (ICP-AES) was applied for the determination of lead in different environmental water samples. Ammonium pyrrolidine dithiocarbamate (APDC), chloroform and ethanol were used as chelating agent, extraction solvent and disperser solvent, respectively. The effective parameters, such...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 2005
ISSN: 0734-211X
DOI: 10.1116/1.1868652